| Summary: | 碩士 === 中原大學 === 電子工程研究所 === 89 === In the mid-1970s, the interest in quaternary III-V semiconductor materials began to flourish, particularly in the InGaAsP lattice matched to InP. These materials give independent control of lattice parameter and bandgap (and other material properties).
Rare-Earth (RE) treated III-V compound semiconductors have been of great interest recently. The RE elements have a strong affinity to oxygen and other group VI elements, the effect can be used to perform effective gettering of the background donors and acceptors in III-V semiconductors.
In this study, we grow 1.55μm- luminescent-wavelength InGaAsP on the InP substrate by liquid phase epitaxy(LPE) and add different rare-earth elements(Ho, Nd and Yb) into the growth solution to reduce the background concentration.
Characterizations of InGaAsP epilayers by PL and Hall measurements indicate that both electrical and optical qualities of epilayers are improved by rare-earth treatment. The narrowest FWHM of PL spectrum and the lowest carrier concentration can be obtained from the case of Yb-treatment with Yb adding amount of 0.06565wt%.
Finally, we fabricate PIN photodiodes on undoped and Yb-treated InGaAsP epilayers. Better device properties are still obtained from the same condition as above, namely, carrying out the LPE growth with Yb-treatment, particularly, adding the amount of Yb to higher than 0.06565wt%.
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