| Summary: | 碩士 === 中原大學 === 電子工程研究所 === 89 === The optoelectronic devices have had a mature development in recent years. The most popular research is on the light emitting diodes, where and the involved manpower is also the largest. The main research purpose in this field is to produce three fundamental kinds of visible red, green, and blue LEDs, whatever the crystal or epitaxial techniques are used. In this work, we study a comparatively new II-VI compound semiconductor material, which is called zinc tellurium. Zinc tellurium has high forbidden bandgap of 2.26eV at room temperature. Using this property, we can obtain a pure green emitting spectra of luminescent wavelength about 550nm.
In this research, we grow ZnTe bulk crystals by TGSG (temperature gradient solution growth) method. A perfect ZnTe bulk crystal can be used as a substrate for homoepitaxy that present a good device basis. Otherwise, the epitaxy ZnTe on other III-V substrates must face the problem of lattice mismatch, which should be seriously solved in optoelectronic device applications.
Our research starts from the growth of bulk crystal, and then followed by the growth of p-type and n-type crystals. We carry out the Hall, C-V, and photoluminescence measurements to define and analyze each type of ZnTe crystals. We expect that the results of this study can make a good start for future ZnTe green LEDs or other ZnTe devices.
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