The characteristc parameter extracting circuit of FTFN elements
碩士 === 中原大學 === 電子工程研究所 === 89 === This research has been focused on the simulation circuit of a single four-terminal floating nullor (FTFN) element. A simple and efficient simulation circuit was developed. Three physical FTFN circuits were illustrated and simulated to demonstrate the fea...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/24430077155082495942 |
| Summary: | 碩士 === 中原大學 === 電子工程研究所 === 89 === This research has been focused on the simulation circuit of a single four-terminal floating nullor (FTFN) element. A simple and efficient simulation circuit was developed. Three physical FTFN circuits were illustrated and simulated to demonstrate the feasibility of the developed circuit. When this circuit was employed, the simulation results showed that it was able to sense the leakage current of the terminal x of the FTFN, and then the accuracy of the current response of the FTFN circuit has been improved.
Next a negative-type second-generation current conveyor (CCII-) consisting of gallium arsenide metal-semiconductor field-effect-transistor (GaAs MESFET) operational amplifiers and resistors was presented. The presented CCII- was applied to a physical filter to verify the practicality of the presented CCII-.
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