TiN Mode Shift Improve for DRAM Metal Film
碩士 === 中華大學 === 電機工程學系碩士班 === 89 === PVD TiN are widely used in semiconductor thin film process. TiN film used as barrier layer due to its lower resistive and good diffusion barrier characteristic. Enough TiN film thickness prevent WF6 penetrate to under Ti layer reaction TiF4 vapor make...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/60367609210085314615 |