STUDIES ON THE CHARACTERISTICS OF OLIGOMERIC ANILINE METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR

• Main Authors: Duen-Jye Yang, 楊惇傑
• Other Authors: Chin-Tsou Kuo
• Format: Others
• Language: zh-TW
• Published: 2000
• Online Access: http://ndltd.ncl.edu.tw/handle/92724506017795520394

碩士 === 大同大學 === 化學工程研究所 === 88 === ABSTRACT In this study, the oligomeric aniline, which contained benzidine unit, synthesized chemically and its structure and characteristics are confirmed by FT-IR, FAB-MS, EA and NMR. The characteristics of metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated with oligomeric aniline as semiconducting layer by evapotation are investigated. Evaporating temperature, substrate temperature, morphology and the thickness of film and silicon dioxide can influence the characteristics of MOSFETs. The highest mobility and modulation (2.61  10 —2 cm2/V-s and 3.20  10 4) were obtained for transistors prepared at evaporating temperature of 250 oC and substrate temperature of 50 oC.