| Summary: | 碩士 === 國立臺灣科技大學 === 工程技術研究所材料科技學程 === 88 === Iridium dioxide (IrO2) films were deposited on Si substrates by metal-organic chemical vapor deposition method under various conditions. A detailed characterization including X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), high resolution transmission electron microscopy (HRTEM), resistivity and Raman scattering spectroscopy were carried out.
The results of XRD, SEM and AFM measurements indicate that the column-like polycrystalline films were grown by using (MeCp)Ir(COD) (Methylcyclopentadienyl)(1,5-cyclooctadiene) iridium (I) as precursor. The average grain sizes of the films were estimated by AFM. The relation between the average grain size and resistivity were studied. The film with the grain size of about 400 nm showed a larger residual resistance ratio (RRR) compared with that of the films deposited by reactive RF sputtering. The results of Raman investigation reveal that high quality of IrO2 films could be deposited Si substrate by MOCVD.
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