| Summary: | 碩士 === 國立臺灣大學 === 機械工程學研究所 === 88 === A Simulation Study on Wafer Temperature in the Rapid Thermal Process
In a rapid thermal process, the physical and chemical characteristics of the wafer and the film deposition rate are directly influenced by the temperature distribution on the wafer surface. In order to improve yields of the wafer, improving uniformity of temperature distribution is important. Based on the principle of energy balance between heat radiation and conduction, a simple model is used to describe temperature distribution on a wafer. Since a furnace is composed of parallel lamps, square walls, and circular wafers, heat transfer model is treated as two-dimensional. Numerical method is employed to computer for the steady temperature distribution. The effects of various design parameters in the temperature distribution on the wafer are analyzed. From the simulation results, it is found that the steady temperature average on the wafer is inversely proportional to the distance between lamps and the wafer. The maximum temperature nonuniformity is not larger than 0.9%. Because the effect of quartz plate causes a large error between simulation results and experimental data, quartz plate can not be ignored in the model.
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