| Summary: | 碩士 === 國立海洋大學 === 光電科學研究所 === 88 === As a extension of laser-assisted cryoetching\footnote{Through the thesis, we concisely use the term ``PUVLACE'', stands for Pulsed UV Laser Assisted Cryogenic Etching to represent the damage-free, high resolution, and high anisotropic dry etching technique utilized by pulsed UV laser at low temperature.} on GaAs\cite{ShihD1994}, GaN (intrinsic) [C1] and n-GaN[C2], the thesis reports the application of this low surface damage tching technique for the etching of GaN and SiCN film which are potentially important material for blue light device and dvanced opto-electronic devices because of its high band gap and high mobility. Since GaN and SiCN are chemically inert(refers to table \ref(tbl:BandGapBondEnergyOfGaAsAlNGaNInNSiCN}, page \pageref{tbl:BandGapBondEnergyOfGaAsAlNGaNInNSiCN}) to the surface chemical reaction thus make such material resist to most of conventional etching technique(wet and dry). Previous study showed the no etched surface damage of GaAs and its related
semiconductors by UV(Ultra Violet) laser assisted cryogenic etching\cite{ShihD1994}. In this thesis, we present the etching of p-GaN and SiCN film by the UV pulse laser assisted cryogenic etching. We shows the etching result of the PUVLACE on p-GaN, SiCN and the discussion on the detailed of using this technique in achieving optimized etching condition.
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