TiN with Multilayered Structure and TaN as Diffusion Barrier for Cu Metallization
碩士 === 國立清華大學 === 材料科學工程研究所 === 88 === In this research,a novel multilayered Ti/TiN diffusion barrier was proposed applied to Cu metallization. TiN film displays columnar structure after PVD sputtering, and the grain boundaries between two columnar grains become fast diffusion path and hence res...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/73873275818937053580 |
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