the electrical characterization study of metal-Ta2O5-semiconductor field effect transistors
碩士 === 國立清華大學 === 電子工程研究所 === 88 === Abstract The Ta2O5 films are deposited by plasma enhanced chemical vapor deposition system. The C-V, ID-VD and ID—VG characteristics are measured. The electron mobility obtained from gm plot was 333 cm2/V·s at VG=0.35V. The subthreshold swin...
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/00845717158473419575 |
| Summary: | 碩士 === 國立清華大學 === 電子工程研究所 === 88 === Abstract
The Ta2O5 films are deposited by plasma enhanced chemical vapor deposition system. The C-V, ID-VD and ID—VG characteristics are measured. The electron mobility obtained from gm plot was 333 cm2/V·s at VG=0.35V. The subthreshold swing was 73 mV/dec.
The gate transport mechanism is dominated by Schottky emission at higher field(Eox>1MV/cm).The gate current is dependent on the electron concentration in the inversion layer at lower field(Eox=0.6~1.3MV/cm).
The emssion probability is a strong function of gate voltage and the oxide-trapped charge density(nOT) increases with the magnitude of emitter bias.
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