The Fabrication and Characterization of Metal-Ferroelectric ( Pb(Zr0.53Ti0.47)O3 )-Insulator-Semiconductor Capacitors
碩士 === 國立清華大學 === 電子工程研究所 === 88 === The electrical characteristics of metal-ferroelectric-insulator-silicon (MFIS) structures are studied. The ferroelectric layer is lead-zirconate-titanate (PZT). The insulators layer is either TiO2 or Ta2O5. This structure is studied for the potential application...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/79018412887544206595 |