A Study of Proximity Effect in Multilayered Nb/Al Thin Film System
碩士 === 國立清華大學 === 物理學系 === 88 === We fabricate several Nb/Al multilayer samples with different parameters by using sputtering method. In our experiment, we keep the period numbers and each Nb layer thickness are 10 and 200 angstron respectively. We vary Al layer thickness from 0 to 400 angstron, the...
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/98404645916473005621 |
| Summary: | 碩士 === 國立清華大學 === 物理學系 === 88 === We fabricate several Nb/Al multilayer samples with different parameters by using sputtering method. In our experiment, we keep the period numbers and each Nb layer thickness are 10 and 200 angstron respectively. We vary Al layer thickness from 0 to 400 angstron, therefore each sample has their total thickness larger than 2000 angstron to avoid size effect. We measure the two direction upper critical field versus temperature, one direction is parallel to film and the other one is perpendicular to film. We compare our experiment results with Nb/Cu multilayer systems which made by I.K.Schuller. We also use de Gennes-Werthamer proximity effect theory to fit my data and discuss it.
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