快速熱製程對矽化鈷的影響

• Main Authors: T. C. Tsai, 蔡子中
• Other Authors: Shinn-Tyan Wu
• Format: Others
• Language: zh-TW
• Published: 2000
• Online Access: http://ndltd.ncl.edu.tw/handle/93634594610963618724

碩士 === 國立清華大學 === 材料科學工程學系 === 88 === The refractory metal silicides have low sheet resistance, high thermal stability and self-aligned-silicide for IC process; they can reduce the steps with mask, resist and etching process. In recent, cobalt silicide (CoSi2) has been a subject of research because the aforesaid advantages. The research used DC magnetron sputtering system, and the samples have two parts. One is pure cobalt film, the others is both cobalt and TiN. The rapid thermal annealing is both two conditions, one is only one step, the others is two steps. About analysis, the thin film's structure is confirmed by X-ray diffraction (XRD) and glancing angle diffraction. Scanning electron microscopy (SEM) checked thickness and structure of thin-film surface. For resistance measured by four-point probe. The resistances of two steps samples are lower the one step's samples. Cobalt silicide is faster formed when the temperature of substrate is higher. The reactive temperature reduces when the capping layer added, but the surface of samples has the orange effect.