A Studey of Silicon Dioxide Deposited by Liquid Phase Deposition Method on CuInSe2 and CuGaSe2
碩士 === 國立中山大學 === 材料科學研究所 === 88 === In this paper, we use a room temperature processing system, Liquid Phase Deposition(LPD) method, to grow silicon dioxide. The advantages are cheap equipment, low temperature growth, and no thermal stress. The quality is good enough to be used in IC devices. To in...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/11431030504804507720 |