The study of barrier mechanisms of tantalum nitride diffusion barrier layer between SiGe and Cu
碩士 === 國立中山大學 === 材料科學研究所 === 88 === The failure mechanisms of the tantalum-based nitride diffusion barrier using between copper metal and the SiGe/Si layers grown with UHV/CVD have been studied. The TaN and Cu films were deposited with RF sputtering technique. The structure of these films was analy...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/81867731016766898108 |