Electrical properties of InGaAs and the fabrication of AlInGaAs/InGaAs/InP laterial PIN photodetectors
碩士 === 國立中央大學 === 光電科學研究所 === 88 ===
Main Authors: | K. Y. Chou, 周冠羽 |
---|---|
Other Authors: | G. C. Chi |
Format: | Others |
Language: | zh-TW |
Published: |
2000
|
Online Access: | http://ndltd.ncl.edu.tw/handle/95350690381513510844 |
Similar Items
-
Quantum well intermixing in 1.55 um InGaAs/AlInGaAs and InGaAs/InGaAsP structures and applications
by: Liu, Xuefeng
Published: (2002) -
High responsivity of planar InGaAs/InP PIN photodetectors
by: Sheng-Yuan Denq, et al.
Published: (1995) -
InGaAs PIN photodetector fabrication and electronics measurement
by: Hong-Mau Tsai, et al.
Published: (2007) -
Fabrication of InGaAs Photodetectors
by: Yung-ShengWang, et al.
Published: (2010) -
InGaAs/InP Metal-Semiconductor-Metal Photodetectors
by: Tsung-Shang Wei, et al.
Published: (1993)