An Improved Levelized Incomplete LU Method and Its Application to 2D Semiconductor Device Simulation
碩士 === 國立中央大學 === 電機工程研究所 === 88 === Numerical simulation of semiconductor device plays a very important role in the design and development of integrated circuits. In this thesis, we will present a new circuit simulator with improved Levelized Incomplete LU method to perform the simulation. To have...
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| Format: | Others |
| Language: | en_US |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/97121148936741086761 |
| Summary: | 碩士 === 國立中央大學 === 電機工程研究所 === 88 === Numerical simulation of semiconductor device plays a very important role in the design and development of integrated circuits. In this thesis, we will present a new circuit simulator with improved Levelized Incomplete LU method to perform the simulation. To have an environment for evaluating the interaction between semiconductor device and the circuit, we use the equivalent circuit approach. This approach allows for the simple representation carrier transport models of devices through equivalent circuit elements such as voltage controlled current sources and capacitors. Therefore, we can perform the mixed-level simulation in general circuit simulators. We will take PN diode switching circuit and MOSFET as examples to test our equivalent circuit model and the improved circuit simulator. The comparison between improved matrix solution method and the conventional method will be demonstrated in this thesis too.
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