The Crystal Growth and Properties of GaSeby Vertical Bridgeman Method
碩士 === 國立交通大學 === 光電工程所 === 88 === In this study ,crystals of GaSe were grown by Vertical Bridgeman method .An X-Ray diffraction pattern showed that crystal belong to -modification .Since Se evaporate well below the melting point of GaSe (938oC) , an excess of Se was added in the synthesi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/86387425178484085458 |