The Crystal Growth and Properties of GaSeby Vertical Bridgeman Method

• Main Authors: Yung-Cheng Chang, 張永承
• Other Authors: Chen-Shiung Chang
• Format: Others
• Language: zh-TW
• Published: 2000
• Online Access: http://ndltd.ncl.edu.tw/handle/86387425178484085458

碩士 === 國立交通大學 === 光電工程所 === 88 === In this study ,crystals of GaSe were grown by Vertical Bridgeman method .An X-Ray diffraction pattern showed that crystal belong to -modification .Since Se evaporate well below the melting point of GaSe (938oC) , an excess of Se was added in the synthesis procedure . The influence of synthesis procedure on sample quality would be examined by X-Ray , absorption coefficient , and PL . Annealing of as-grown GaSe crystals in different Se atmosphere at 500oC,600oC and 700oC for 72 hours took a decrease of intrinsic defects of gallium vacancy .The influence of annealing procedure on crystal quality would also be examined . The result showed that , an excess of Se for 5wt% had better quality in the procedure of crystal growth . Our investigation of annealing at different temperature and atmosphere showed that the condition in 5wt% Se atmosphere at 600oC were optimal for the reduction in the number of intrinsic structure defects .