| Summary: | 碩士 === 國立交通大學 === 光電工程所 === 88 === We have used pulsed laser deposition to grow GaSe thin films on the corning glass from GaSe crystal target. under the substrate temperature 450℃ and the pulsed repetation rate 20 Hz , we obtained highly oriented GaSe thin film in the (004) direction . Varying the pulse repetation rate at the substrate temperature 400℃ , we found 30 Hz is the optimal pulse repetation rate from growing the thin film. From the FWHM of the X-ray data, the crystallite domain is 193 , from room temperature PL the edge emission at 2.13eV is slightly blue shift as compared of bandgap of 2.05eV of GaSecrystal at room temparature. We calculate the crystallite domain is 93 , according to the strong confinement quantum size effect. The over estimated result , indicates that the strain induced blue shift may not be negligible. The sample after annealing at 550℃ , is found the structure improving via X-ray diffraction.
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