Investigation of GaN material process--Ohmic contact on p-GaN and Eximer laser etching of GaN

碩士 === 國立交通大學 === 光電工程所 === 88 === We study the process of GaN material including ohmic contact on p-GaN and Eximer laser etching of GaN. In ohmic contact, alloy consisted of Ni/Pd/Au film deposited on p-type GaN followed by heat treatment in oxygen condition. A good ohmic characteristic and specifi...

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Main Authors:	Yao-Kuo Wang, 王耀國
Other Authors:	Shing-Chung Wang
Format:	Others
Language:	zh-TW
Published:	2000
Online Access:	http://ndltd.ncl.edu.tw/handle/46621230251878811346

id	ndltd-TW-088NCTU0614008
record_format	oai_dc
spelling	ndltd-TW-088NCTU06140082016-07-08T04:22:41Z http://ndltd.ncl.edu.tw/handle/46621230251878811346 Investigation of GaN material process--Ohmic contact on p-GaN and Eximer laser etching of GaN 氮化鎵材料製程研究--p型氮化鎵歐姆接觸與准分子雷射蝕刻 Yao-Kuo Wang 王耀國碩士國立交通大學光電工程所 88 We study the process of GaN material including ohmic contact on p-GaN and Eximer laser etching of GaN. In ohmic contact, alloy consisted of Ni/Pd/Au film deposited on p-type GaN followed by heat treatment in oxygen condition. A good ohmic characteristic and specific contact resistance as low as 1.1 ×10-4Ω-cm2 was obtained at 550℃,5min. Another approach to achieving low-resistance ohmic contact is carrier concentration improvement of p-GaN by Be-implanted . A minimum ρc =4.5×10-4Ω-cm2 and perfect ohmic was obtained by Ni/Pd/Au contact without any heat treatment. In Eximer laser processing, both pulse energy and numbers of pulse of KrF laser were varied to etch the GaN film. By changing the pulsed energy at constant pulse energy, ablation of GaN surface was observed at threshold fluence of 0.3 J/cm2. A high etching rate of 82 nm/sec was obtained at fixed laser fluence of 0.3 J/cm2. Finally, we successfully separate GaN from GaN/sapphire structures using a KrF laser pulse of 1.0 J/cm2. Shing-Chung Wang Wei-Kuo Chen 王興宗陳衛國 2000 學位論文 ; thesis 93 zh-TW
collection	NDLTD
language	zh-TW
format	Others
sources	NDLTD
description	碩士 === 國立交通大學 === 光電工程所 === 88 === We study the process of GaN material including ohmic contact on p-GaN and Eximer laser etching of GaN. In ohmic contact, alloy consisted of Ni/Pd/Au film deposited on p-type GaN followed by heat treatment in oxygen condition. A good ohmic characteristic and specific contact resistance as low as 1.1 ×10-4Ω-cm2 was obtained at 550℃,5min. Another approach to achieving low-resistance ohmic contact is carrier concentration improvement of p-GaN by Be-implanted . A minimum ρc =4.5×10-4Ω-cm2 and perfect ohmic was obtained by Ni/Pd/Au contact without any heat treatment. In Eximer laser processing, both pulse energy and numbers of pulse of KrF laser were varied to etch the GaN film. By changing the pulsed energy at constant pulse energy, ablation of GaN surface was observed at threshold fluence of 0.3 J/cm2. A high etching rate of 82 nm/sec was obtained at fixed laser fluence of 0.3 J/cm2. Finally, we successfully separate GaN from GaN/sapphire structures using a KrF laser pulse of 1.0 J/cm2.
author2	Shing-Chung Wang
author_facet	Shing-Chung Wang Yao-Kuo Wang 王耀國
author	Yao-Kuo Wang 王耀國
spellingShingle	Yao-Kuo Wang 王耀國 Investigation of GaN material process--Ohmic contact on p-GaN and Eximer laser etching of GaN
author_sort	Yao-Kuo Wang
title	Investigation of GaN material process--Ohmic contact on p-GaN and Eximer laser etching of GaN
title_short	Investigation of GaN material process--Ohmic contact on p-GaN and Eximer laser etching of GaN
title_full	Investigation of GaN material process--Ohmic contact on p-GaN and Eximer laser etching of GaN
title_fullStr	Investigation of GaN material process--Ohmic contact on p-GaN and Eximer laser etching of GaN
title_full_unstemmed	Investigation of GaN material process--Ohmic contact on p-GaN and Eximer laser etching of GaN
title_sort	investigation of gan material process--ohmic contact on p-gan and eximer laser etching of gan
publishDate	2000
url	http://ndltd.ncl.edu.tw/handle/46621230251878811346
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Investigation of GaN material process--Ohmic contact on p-GaN and Eximer laser etching of GaN

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