A Study of the Regression Method on the Effect of Wafer Polishing

• Main Authors: Ming-Tang Fu, 傅明堂
• Other Authors: Pi-Ying Cheng
• Format: Others
• Language: zh-TW
• Published: 2000
• Online Access: http://ndltd.ncl.edu.tw/handle/51110840489541626793

碩士 === 國立交通大學 === 機械工程系 === 88 === In the quarter sub-micronmeter process of the semi-conductor production. We aim to achieve the planarization of the full field severely on the exposal surface, not only the planarization of local fields. Up to this time now, only the Chemical Mechanical Polishing(CMP) technology could reach the level of the planarization of the full field. We applied the method of the regression analysis to the effect of CMP, subject to establish the better model from the experimental data of the polishing rate and the planarization on a wafer. We investigated the difference between the results of the experiment and analytical simulation of CMP from some typical types of the wafer polishing examples. The metrical data not only prove the reliability of the theories which were propound in the past, but also actuate the new gadgets and models to be established. This study is applied to prove the quality of the wafer polishing effect through the experiment design of Taguchi Method. Then find out the issues for some problems, and confirm the important factors affecting the quality in the CMP’s process. At the same time, we try to establish the regression equation of the edge effect resulting from some critical factors to observe these defects. The results of the study are compressed to obtain several practical conclusion with the statistical analysis in the permissible variables. (1) When the edge effect is not considered, the experiment could be achieved the best level of the the planarization of the full field on a wafer polishing if the polishing pressure is fixed at 40psi, and the diameter of the O-ing at 17.78 inch. (2) We considered to apply the primary pressure at 20psi and air pressure at 3.5psi on a wafer, then we can shorten the area of the edge effect reaching 0.1~0.2mm on a wafer. At the same time, the relatively maximal pressure would be degraded from 30.1psi to 25.1psi. On the other hand, edge of the wafer. These results could contribute to improve the process of CMP. The several methods and procedures of the study are expected to be references assisting to design the best variables on a relevant process.