Investigation of Hot Carrier Stress-Induced Oxide Reliability Issues in Deep-Submicron CMOS Devices
博士 === 國立交通大學 === 電子工程系 === 88 === This dissertation addresses the issues related to hot carrier effects in CMOS devices. First, an oxide trap characterization technique by measuring a subthreshold current transient is developed. This technique consists of two alternating phases, an oxide charge det...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/33566126001440360481 |