Investigation of Plasma Treated Fluorine-Doped SiO2

Investigation of Plasma Treated Fluorine-Doped SiO2

碩士 === 國立交通大學 === 電子工程系 === 88 === We have studied the properties of fluorine-doped silicon dioxide (SiOF) deposited by adding CF4 to conventional tetraehylorthosilicate (TEOS)-based plasma-enhanced chemical vapor deposition (PECVD). Dielectric constants of SiOF films are reduced from 4.0...

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Bibliographic Details
Main Authors:	Ching-Ho Chang, 張清河
Other Authors:	Dr.Jen-Chung Lou
Format:	Others
Language:	en_US
Published:	2000
Online Access:	http://ndltd.ncl.edu.tw/handle/09295638619281782789

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