Investigation of Plasma Treated Fluorine-Doped SiO2
碩士 === 國立交通大學 === 電子工程系 === 88 === We have studied the properties of fluorine-doped silicon dioxide (SiOF) deposited by adding CF4 to conventional tetraehylorthosilicate (TEOS)-based plasma-enhanced chemical vapor deposition (PECVD). Dielectric constants of SiOF films are reduced from 4.0...
Main Authors: | , |
---|---|
Other Authors: | |
Format: | Others |
Language: | en_US |
Published: |
2000
|
Online Access: | http://ndltd.ncl.edu.tw/handle/09295638619281782789 |
id |
ndltd-TW-088NCTU0428116 |
---|---|
record_format |
oai_dc |
spelling |
ndltd-TW-088NCTU04281162015-10-13T10:59:52Z http://ndltd.ncl.edu.tw/handle/09295638619281782789 Investigation of Plasma Treated Fluorine-Doped SiO2 電漿處理後摻雜氟之二氧化矽的特性研究 Ching-Ho Chang 張清河 碩士 國立交通大學 電子工程系 88 We have studied the properties of fluorine-doped silicon dioxide (SiOF) deposited by adding CF4 to conventional tetraehylorthosilicate (TEOS)-based plasma-enhanced chemical vapor deposition (PECVD). Dielectric constants of SiOF films are reduced from 4.09 to 3.44 by the addition of CF4. The SiOF film (CF4=200sccm) with low concentration fluorine exhibit dielectric constant and refractive index values of 3.62 and 1.428, respectively. Characteristics of breakdown field, leakage current and moisture resistance for the SiOF film (CF4=200sccm) are similar to traditional undoped oxide. As the fluorine content increases, the SiOF films become more unstable to moisture absorption. The moisture absorption of SiOF with high fluorine content are caused by the porosity and the formation of Si-F2 in the films. The absorbed water causes increase of dielectric constant and reliability problems in LSIs. In order to improve the moisture resistance of SiOF films, we would like adopt plasma annealing such as N2O, NH3, O2 and N2 as the post treatment to stabilize this film. We find that N2O-plasma annealing is effective in improving moisture resistance of the SiOF film at the expense of increased K value. The SiOF film (CF4=800sccm) after 10 min N2O plasma annealing is enough to make SiOF film highly resistant to moisture. The SiOF film (CF4=800sccm) after 10 min N2O plasma annealing exhibit dielectric constant and refractive index values of 3.51 and 1.418, respectively. The N2O plasma treatment also improved the quality of SiOF films, as indicated by the increase of the breakdown electric field and the decrease of the leakage current density. Dr.Jen-Chung Lou 羅正忠 2000 學位論文 ; thesis 60 en_US |
collection |
NDLTD |
language |
en_US |
format |
Others
|
sources |
NDLTD |
description |
碩士 === 國立交通大學 === 電子工程系 === 88 === We have studied the properties of fluorine-doped silicon dioxide (SiOF) deposited by adding CF4 to conventional tetraehylorthosilicate (TEOS)-based plasma-enhanced chemical vapor deposition (PECVD). Dielectric constants of SiOF films are reduced from 4.09 to 3.44 by the addition of CF4. The SiOF film (CF4=200sccm) with low concentration fluorine exhibit dielectric constant and refractive index values of 3.62 and 1.428, respectively. Characteristics of breakdown field, leakage current and moisture resistance for the SiOF film (CF4=200sccm) are similar to traditional undoped oxide.
As the fluorine content increases, the SiOF films become more unstable to moisture absorption. The moisture absorption of SiOF with high fluorine content are caused by the porosity and the formation of Si-F2 in the films. The absorbed water causes increase of dielectric constant and reliability problems in LSIs. In order to improve the moisture resistance of SiOF films, we would like adopt plasma annealing such as N2O, NH3, O2 and N2 as the post treatment to stabilize this film. We find that N2O-plasma annealing is effective in improving moisture resistance of the SiOF film at the expense of increased K value. The SiOF film (CF4=800sccm) after 10 min N2O plasma annealing is enough to make SiOF film highly resistant to moisture. The SiOF film (CF4=800sccm) after 10 min N2O plasma annealing exhibit dielectric constant and refractive index values of 3.51 and 1.418, respectively. The N2O plasma treatment also improved the quality of SiOF films, as indicated by the increase of the breakdown electric field and the decrease of the leakage current density.
|
author2 |
Dr.Jen-Chung Lou |
author_facet |
Dr.Jen-Chung Lou Ching-Ho Chang 張清河 |
author |
Ching-Ho Chang 張清河 |
spellingShingle |
Ching-Ho Chang 張清河 Investigation of Plasma Treated Fluorine-Doped SiO2 |
author_sort |
Ching-Ho Chang |
title |
Investigation of Plasma Treated Fluorine-Doped SiO2 |
title_short |
Investigation of Plasma Treated Fluorine-Doped SiO2 |
title_full |
Investigation of Plasma Treated Fluorine-Doped SiO2 |
title_fullStr |
Investigation of Plasma Treated Fluorine-Doped SiO2 |
title_full_unstemmed |
Investigation of Plasma Treated Fluorine-Doped SiO2 |
title_sort |
investigation of plasma treated fluorine-doped sio2 |
publishDate |
2000 |
url |
http://ndltd.ncl.edu.tw/handle/09295638619281782789 |
work_keys_str_mv |
AT chinghochang investigationofplasmatreatedfluorinedopedsio2 AT zhāngqīnghé investigationofplasmatreatedfluorinedopedsio2 AT chinghochang diànjiāngchùlǐhòucànzáfúzhīèryǎnghuàxìdetèxìngyánjiū AT zhāngqīnghé diànjiāngchùlǐhòucànzáfúzhīèryǎnghuàxìdetèxìngyánjiū |
_version_ |
1716835494539558912 |