Breakdown Characteristics of Ultra Thin Oxides
碩士 === 國立交通大學 === 電子工程系 === 88 === The reliability of oxide films is an important issue for ultra large scale integrated (ULSI) IC''s, especially as oxide is getting thinner and thinner. It is known for several years that thinner oxides can have anomalous failure mode. However, despite the...
Main Authors: | Chien-Yuan Lee, 李建源 |
---|---|
Other Authors: | Tiao-Yuan Huang |
Format: | Others |
Language: | en_US |
Published: |
2000
|
Online Access: | http://ndltd.ncl.edu.tw/handle/10014520021989097889 |
Similar Items
-
The Study of Fluorine-Incorporated Oxidation Process and Breakdown Characteristics of Ultra-Thin Gate Oxides
by: Yeh, Kuo-Lang, et al.
Published: (1997) -
Investigation of soft breakdown induced reliability issues in ultra-thin oxide SOI devices
by: Chen, Min-Cheng, et al.
Published: (2004) -
On the Nature of Dielectric Breakdown in Ultra-thin Langmuir Films
by: V. K. Srivastava
Published: (1976-01-01) -
Study on the Current-Voltage and Breakdown Characteristics for MOS Devices with Ultra-Thin Gate Oxides under High Field Stress
by: Chia-Hong Huang, et al.
Published: (2001) -
Low Leakage and High Breakdown Endurance Ultra-thin Gate Oxides Prepared by Anodization Technique
by: Chieh-Chih Ting, et al.
Published: (2000)