A Study of Advanced DRAM Capacitor Structure with Rugged Poly-Si Electrode and High Dielectric Constant Material & Process Optimization for Improved Retention Characteristic

博士 === 國立交通大學 === 電子工程系 === 88 === Abstract The main goal of this thesis is to improve the refresh time of DRAM cell. It can be accomplished by two approaches. The first approach is to increase the storage capacitance of the cell, while the other approach is to reduce the junction leak...

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Bibliographic Details
Main Authors: mark lin, 林俊賢
Other Authors: chun-yang chang
Format: Others
Language:zh-TW
Published: 1999
Online Access:http://ndltd.ncl.edu.tw/handle/62652947292432198404

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