| Summary: | 碩士 === 國立交通大學 === 物理研究所 === 88 === Using polarization-dependent O 1s and Cu 2p near-edge x-ray absorption structure on Y1-xCaxBa2Cu3Oy thin films, we have identified the unoccupied electronic states of the samples and studied the dependence on Ca concentration.
X-ray absorption structure (XANES) was recorded by fluorescence yield mode, which is a bulk-sensitive technique. XANES can give information about the carrier concentration n on specific sites.
Results:
Both of Ca and Oxygen doping increase hole numbers. With Ca doping, the induced holes almost increase on plane instead of chain or apical O（4）site. Only the O(1) on the CuO3 chain was taken away, when the sample is oxygen—depleted. The carriers concentration on the CuO2 plain play the major role, that affects the critical temperature Tc.
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