Materials study of TaN and Ti bilayers for copper Interconnect
碩士 === 國立交通大學 === 材料科學與工程系 === 88 === Abstract Cu is expected to be adopted in deep submicron ultra-large scale integration metallization due to its lower resistivity and better reliability than conventional Al alloys. Since copper diffuses fast in Si and introduce deep-level t...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/42776423828777434221 |