Testing of Micro Sensors and Micro Structures

• Main Authors: C. S. Wu, 吳嘉聖
• Other Authors: T. Y. Chen
• Format: Others
• Language: en_US
• Published: 2000
• Online Access: http://ndltd.ncl.edu.tw/handle/37473581457013365461

碩士 === 國立成功大學 === 機械工程學系 === 88 === In this thesis, we combine piezoelectric translators, load cell and A/D converter to form a measuring system. Thus, we use this system in static and dynamic testings and calibrations of micro pressure sensor and micro shear sensor, which are designed and manufactured by ourselves. We also measure the influence of temperature on micro sensor. And we apply the measuring system to the testings of material properties of silicon-the major material in manufacturing sensors. From the results, the sensitivity of micro pressure sensor is 7μV/mA-KPa with maximum working frequency band of 6 Hz. The output voltage of micro shear sensor change with different values and directions of shear forces. By using the equation, we can reversely get the shear stress from the output voltage of micro shear sensor. The thinner the diaphragm of micro sensor is, the higher the effect voltage is, and the better the sensitivity on temperature is. The Young''s modulus of silicon is 134.58 GPa.