| Summary: | 碩士 === 國立成功大學 === 電機工程學系 === 88 === In this thesis, it is proposed that the parameters extraction of AlGaAs/GaAs HBTs, and the analyses and the model establishment of thermal effects in HBTs.
To establish the model with thermal effects and leakage currents in HBTs. We adopt the Gummel-Poon Model and add a sub-circuit with thermal effects and leakage currents with it because of without suitable model for HBTs. To simply the simulation function and increase the efficiency of computer simulation, the parameters are divided into two parts. One is strong temperature dependence, another is weak temperature dependence. Parameters with strong and weak temperature dependence are computed with and without function of temperature.
To extract the parameters of the model, the measured data are proceed by the BJT model of IC-CAP. After extracting, the initial parameters of HBTs with different emitter areas are obtained. Afterwards, the extracted parameters are substituted into the model we established. And the parameters with thermal effects and leakage currents are extracted from the model.
To prove the accuracy of the AlGaAs/GaAs HBTs model we established, the simulated results are compared with measured data. And it really presents well matched in our model.
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