Thermal Stability of ε1-Cu3Ge Schottky Contact on n-GaN
碩士 === 國立成功大學 === 材料科學及工程學系 === 88 === The thermal stability of ε1-Cu3Ge Schottky contact on n-GaN was studied. Upon annealing the ideality factor (n) of the Cu-25 at.% Ge and Cu-35 at.% Ge samples first decreased with the annealing temperature up to 600℃ and then increased at 650℃. The cause for th...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/48002979469472623913 |
| Summary: | 碩士 === 國立成功大學 === 材料科學及工程學系 === 88 === The thermal stability of ε1-Cu3Ge Schottky contact on n-GaN was studied. Upon annealing the ideality factor (n) of the Cu-25 at.% Ge and Cu-35 at.% Ge samples first decreased with the annealing temperature up to 600℃ and then increased at 650℃. The cause for the increase of n may be ascribed to the significant interdiffusion betweenε1-Cu3Ge and GaN after annealing at 650℃. In General, upon annealing at the same temperature the n value of Cu-35 at.% Ge samples is larger than that of Cu-25 at.% Ge samples because of Ge phase in the former. The Schottky barrier height of Cu-25 at.% Ge and Cu-35 at.% Ge samples decreased with the annealing temperature. After annealing at 700℃ the ε1-Cu3Ge Schottky contact failed because the agglomeration appeared in the ε1-Cu3Ge film. In present study, theε1-Cu3Ge Schottky contact on n-GaN can be stable up to 650℃, which is more thermally stable than NiSi Schottky contact on n-GaN.
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