Study on Fabrication of Temperature Sensor and Operational Amplifier Using CMOS Standard Process Technology
碩士 === 華梵大學 === 機電工程研究所 === 88 === This thesis studys CMOS compatible integrated temperature sensors and operational amplifier. In the experiments, The device were fabricated using UMC 0.5μm 2P2M or TSMC 0.6μm 1P3M process. First, we fabricated four different temperature sensor, Which inc...
Main Authors: | Chi-Ching Yeh, 葉奇青 |
---|---|
Other Authors: | Jyh Ling Lin |
Format: | Others |
Language: | zh-TW |
Published: |
2000
|
Online Access: | http://ndltd.ncl.edu.tw/handle/35516275600460181996 |
Similar Items
-
Study on Fabrication of Gas Sensor Using CMOS Standard Process Technology
by: Kuei-Ming Tseng, et al.
Published: (2000) -
Operational Transconductance Amplifier in 350nm CMOS technology
by: Dejan D. Mirković, et al.
Published: (2015-06-01) -
Fabrication process of High-aspect-ratio Photo Resist for CMOS Image Sensors
by: Yeh, Chun-Wei, et al.
Published: (2016) -
Photodetectors Fabricated by Standard CMOS Technology in 850 nm wavelength
by: Ching-wen Wang, et al.
Published: (2011) -
The Research and Deliberateness of Designing CMOS Operational Amplifiers
by: Ching-Yun Tsai, et al.
Published: (2010)