Photoluminescence Study of GaN by Controlling the Carrier Gas H2/N2 Ratio
碩士 === 中原大學 === 物理學系 === 88 === This study is concerned entirely with a series of GaN films grew using different carrier gas hydrogen to nitrogen ratio by lower pressure metalorganic chemical vapor deposition (LP-MOCVD), simultaneously, we investigate the variation of the band edge and de...
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| Format: | Others |
| Language: | en_US |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/65430473485409250928 |