Study on Optical and Electric Characterization of GaN:Mg

• Main Author: 彭麗慧
• Other Authors: Amy H.-M. Chu
• Format: Others
• Language: zh-TW
• Published: 2000
• Online Access: http://ndltd.ncl.edu.tw/handle/54474546650583121474

碩士 === 中原大學 === 物理學系 === 88 === Owing to the blue light emitter of materials GaN and related III-V nitride semiconductors with the wurtzite crystal structure and a wide direct energy band gap, which are most appropriate for using in optical devices, especially in blue and ultraviolet light-emitting diodes (LEDs) and laser diodes (LDs). In this study, the samples take the Mg-doped GaN films are grown on c-face sapphire substrate by Atmospheric pressure metalorganic chemical vapor deposition (AP-MOCVD) using trimethylgallium (TMGa), NH3 and bis-Cyclopentadienyl Magnesium (Cp2Mg) as Ga, N and Mg source, respectively. Carrier gas and shroud gas are hydrogen (H2). The Mg-doped GaN films are employing various grown temperature tares, and these films are characterized by the microscope, room temperature photoluminescence (PL) spectroscopy and Hall-effect measurements. Optimum Mg acceptor activation annealing conditions are determined to the 725℃for 20 minutes in a nitrogen ambient by PL measurement at room temperature. The Mg-doped GaN films at 1120℃~112℃ are provided higher carrier concentrations and better optical emission properties. The intensity of PL spectra is highest at 1120℃,and the PL peak around 4340(A) is observed at roomtemperature. The p-type GaN films with carrier concentrations and mobility about 7.78×1017(cm-3) and 3.75(cm2V-1sec-1), respectively, have been achieved at 1126℃.