Laser diodes and super-resolution near-field structures studided by a tapping-mode near-field scanning optical microscope

• Main Authors: Wei Chih Lin, 林威志
• Other Authors: Din Ping Tsai
• Format: Others
• Language: zh-TW
• Published: 2000
• Online Access: http://ndltd.ncl.edu.tw/handle/06691462018337537686

碩士 === 國立中正大學 === 物理系 === 88 === A tapping-mode tuning fork force-sensing method for near-field scanning optical microscope (NSOM) has been developed for the measurements of the gradients of near-field optical intensity. The oscillating of the probe height provides a novel means of the local optical gradient measurements. We demonstrated the measurement of the local dielectric constant of Au thin film and the variation of localize surface plasmon enhancement on the surface of Ag thin films of different thickness. Imaging local index variation of the AlGaInP/GaInP laser diode by using a form of modulated scanning near-field optical microscopy is suggested, and the variation of the localized refractive index of surface on active region is provided. For the AgOx-type super resolution structure optical near-field structure (Super-RENS), imaging results of the near-field intensity gradients showed that the focused light through the super-RENS (glass/Zns-SiO2/AgOx/Zns-SiO2), consists of a normal propagating term and an evanescent term resulting from the laser-excited localized surface plasmon of the films of AgOx . In the near-field, the dynamic localized area enhancement of light spot through the Super-RENS is provided. We also demonstrate the measurement of the relation between enhanced orders of transmitted light and the proportion of Ag and oxide.