Preparation and Characteristic of GaN Nanowires Encapsulated in Carbon Nanotubes
碩士 === 國立中正大學 === 化學研究所 === 88 === We described a simple method to prepare large-scale GaN nanowires from the reaction of gallium and ammonia using polycrystalline metal alloy compound as a catalyst. Scanning electron microscopy indicated that almost all the resulting materials exhibited wire-like s...
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| Format: | Others |
| Language: | zh-TW |
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2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/73258954067473930937 |
| Summary: | 碩士 === 國立中正大學 === 化學研究所 === 88 === We described a simple method to prepare large-scale GaN nanowires from the reaction of gallium and ammonia using polycrystalline metal alloy compound as a catalyst. Scanning electron microscopy indicated that almost all the resulting materials exhibited wire-like structures with diameters in the range of 20 to 200 nm and lengths up to several micrometers. The bulk wire-like materials had the GaN wurtzite structure as characterized using X-ray diffraction.
We also described a simple method to prepare large-scale GaN nanowires encapsulated in carbon nanotubes from the reaction of gallium ﹑ammonia and methane using polycrystalline metal alloy compound as a catalyst. High-resolution transmission electron microscopy have been employed to determine the structure and stoichiometry of the individual GaN nanowire encapsulated in carbon nanotube.
The new synthetic technique, which makes possible simple and large-scale production of GaN nanowires and GaN nanowire encapsulated in carbon nanotube, opens up applications of the nanowires for high efficiency optoelectronic devices.
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