| Summary: | 碩士 === 中正理工學院 === 電子工程研究所 === 88 === The PIN diode with high doping regine on its two sides and an insulating layer of high resistivity within, it can efficiently sustain a higher breakdown voltage. Under the condition of forward bias, it can reduce the conductive resistance to a very low value as one small resistor; on the contrary, when used in reve-rse bias, it sustains hundreds or thousands volts of breakdown voltage, and thus functions like a capacitance. Consequently, the PIN diode is often used in high power microwave circuits as attenuator, phase-shift or high frequency switch. Moreover, because of its well-developed manufacturing-tech, it can be used in the C4ISR radar system. But still, there are a few parameters that affect the breakdown capacity of the PIN diode; and among which, the fabrication of
passivation is the most critical one. This thesis tries to form a new passivation method by implanting oxygen ion around the PIN diode after the molding of the mesa. In so doing, we can successfully uplift the average breakdown voltage to 600~800 volts, which is apparently a great step from the original 240~360 volts without passivation. Besides, we have also tried different ways of passivation, including the implantation of hydrgen ion, sputter SiC and MgO, spin on polymird,etc., so as to have more understanding about the passivation of various materials.
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