Simulation and Study of the Hysteresis, Drift and Temperature Effect of the pH-ISFET Based on Hydrogenated Amorphous Silicon and Amorphous Tungsten Oxide
碩士 === 國立雲林科技大學 === 電子工程與資訊工程技術研究所 === 87 === The ion-sensitive field-effect transistor (ISFET) was developed in 1970s. It has potential advantages over conventional ion selective electrodes in their small size, rapid response, high input impedance and low output impedance. It is extremel...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1999
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/75316965385850782826 |