Design and Fabrication of High Resolution Detector for Dispersive Synchrotron Radiation

• Main Authors: Ou Feng Ching, 歐奉京
• Other Authors: C. Y. Sun
• Format: Others
• Language: zh-TW
• Published: 1999
• Online Access: http://ndltd.ncl.edu.tw/handle/14253288167701664228

碩士 === 國立臺灣科技大學 === 電子工程系 === 87 === The purpose of this work is to produce a photo-detector of diode array with PIN structure and 512 pixels on a 5cm*1cm area silicon wafer to detect Synchrotron Radiation. In order to reduce the complexity of processing and measurement, we connect a 512*1 multiplexer at the output of the photo detector. It not only reduces the numbers of the pads in the integrated circuit, but also makes the photo current more convenient to measure. The bias resistors are built in the integrated circuit to avoid the extra noise caused by connecting them extraneously. Thus the S/N ratio of the whole detector is improved. In addition to the detail design and processing of the element, the important characteristics of the detector, such as spectrum response and frequency response are also presented .