A Prediction of Electromagnetic Interference Effects in MOS Gates
碩士 === 國立臺灣科技大學 === 電子工程系 === 87 === MOS gates have widely been used in integrated circuits. However, the high frequency electromagnetic interference signals can affect their responses. In order to predict the degree of interference effect on cir-cuit performance, we have studied the feat...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/27007120698895824661 |
| Summary: | 碩士 === 國立臺灣科技大學 === 電子工程系 === 87 === MOS gates have widely been used in integrated circuits. However, the high frequency electromagnetic interference signals can affect their responses. In order to predict the degree of interference effect on cir-cuit performance, we have studied the feature and mechanism of de-vice response in the presence of electromagnetic interference. A SPICE software is applied to simulate the gate response. Then, ana-lytic formulae are derived for the analysis of electromagnetic interfer-ence effect on the MOS gates. An equivalent RF-induced voltage mod-els and rectification models for the single MOSFET、CMOS inverter and NAND gate are presented. The results are compared with experi-mental data. Moreover, other factors affecting device susceptibility to interference are also discussed.
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