Studies on the cytotoxic mechanisms of Gallium, Germanium, Indium and Antimony in NIH/3T3 cells

• Main Authors: Lu Yi-Huey, 呂怡慧
• Other Authors: Lu Fung-Lu
• Format: Others
• Language: zh-TW
• Published: 1999
• Online Access: http://ndltd.ncl.edu.tw/handle/36602278660001269151

碩士 === 國立臺灣大學 === 生化學研究所 === 87 === The research on metals for use in semiconductors had been accompanied by an increasing amount of toxic materials released as potential toxic wastes, which were harmful to health and environment. The purpose of this study was to clarify the molecular mechanism of the cytotoxicity of these semiconductor-metals including gallium, germanium, indium and antimony. After treatment of NIH/3T3 cells with Ga2(SO4)3, GeO2, InCl3, and SbCl3 for 72 hours, we found that these metal ions were toxic to cells, and showed dose-dependent response of cytotoxicities which were measured by MTT assay. Exposure of NIH/3T3 cells to InCl3 (100 g/ml) and SbCl3 (100 g/ml) for 2 and 4 hours leaded to the generation of hydrogen peroxide, measured with the DCFH-DA regent to the cells. Exposure to SbCl3 (100 g/ml) with NIH/3T3 cells for 2 and 4 hours could induce the activation of NF-B using the electrophoretic mobility shift assay (EMSA). Treatment of NIH/3T3 cells with SbCl3 resulted in the induction of apoptosis as shown by the DNA fragmentation and morphological changes. The DNA fragmentation due to apoptosis could be blocked by catalase (an inhibitor of H2O2). suggesting that induction of apoptosis of NIH/3T3 cells by SbCl3 may be mediated through reactive oxygen intermediates generated by SbCl3. In conclusion, this data shows that ROI might act as one of messengers in induction of apoptosis of NIH/3T3 cells.