| Summary: | 碩士 === 國立臺灣大學 === 電機工程學研究所 === 87 === As the dimension of devices in ULSI is down scaling, in order to decrease the dopant redistribution or grow the thin gate oxide, rapid thermal processing, base on rapid heating of wafers using high energy laser, play an important role in the ULSI technology. Hence, the study of the high quality and thin uniformity oxide is very important. In this thesis, we will study the rapid thermal oxidation growth and characterization.
In the chapter 2, we studied the laser-induced oxidation (LIO). We have grown the laser-induced oxide and analyzed the characteristic. We investigated the Si-O-Si asymmetric stretching mode using Fourier-transform infrared (FTIR) absorption in the various ambiences of the Si wafers.
In the chapter 3, we studied the oxidation on the Si and Si1-xGex layers. We also investigated the infrared studies and the growth rate of the oxide on the Si and Si1-xGex layers.
In the chapter 4, we grew a series of the ultra-thin oxide under the various times, temperatures, pressures, and orientation, developed a mode to predict its thickness, and further analyzed the effect of different factor on thickness, such as temperature, time, and pressure,…etc in the rapid thermal processing (RTP).
In the chapter 5, we made a summary and a future work.
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