Study of 1.55 μm asymmetric couple quantum well active layer laser-modulator OEIC

• Main Authors: Li-Wei Sung, 宋立偉
• Other Authors: Hao-Hsiung Lin
• Format: Others
• Language: zh-TW
• Published: 1999
• Online Access: http://ndltd.ncl.edu.tw/handle/71295556112505772690

碩士 === 國立臺灣大學 === 電機工程學研究所 === 87 === In this study, we realize 1.55μm DFB laser - modulator optoelectronic integration circuits by using identical active layer (IAL) approach which applies the same active layer in laser and modulator. To solve the intrinsic problem in identical active layer approach that the laser gain spectrum is too close to the modulator absorption, a novel asymmetric couple quantum well structure was designed to enlarge the separation between the gain and absorption spectrum theoretically. Then two epitaxial samples with conventional QWs and asymmetric couple QWs were grown by gas source MBE and processed to be broad area lasers and PIN photo diodes. From the measurement results of those devices, the theoretical calculation is proven. Finally, 1.55μm DFB laser - modulator optoelectronic integration circuits with 13dB Extinction ratio are demonstrated.