鈦鎳銅三元形狀記憶合金薄膜濺鍍參數之研究

• Main Authors: Yong-Song Chen, 陳永松
• Other Authors: Shyi-kann Wu
• Format: Others
• Language: zh-TW
• Published: 1999
• Online Access: http://ndltd.ncl.edu.tw/handle/93995056248078302677

碩士 === 國立臺灣大學 === 材料科學與工程學研究所 === 87 === Effect of sputtering parameters on the composition variation of TiNiCu thin film is investigated in this study. Composition variation of thin film may be resulted from Ti, Ni, and Cu atoms leaving the target with different initial energy and selective thermalization effect during the sputtering deposition process. By measuring the intensity ratio of Ti, Ni, Cu light emitted from the sputtering plasma, the composition of thin film can be estimated. The as-deposited film is amorphous and its crystallization temperature is about 470~510oC with DSC tests, while the activation energy of crystallization is 381KJ/mol with Kissinger’s method. Investigated by DSC and electrical resistivity, transformation temperatures of TiNiCu10 thin film are about 40 oC lower than those of bulk TiNiCu10 alloy. The lowering of transformation temperatures can be attributed to the refined grain size and the oxygen absorption. The as-deposited film shows large compressive stress at lower sputtering pressure, however, post-annealed film is found to be in the state of tensile stress.