TRANSMISSION ELECTRON MICROSCOPE CHARACTIZATION ON MICROSTRUCTURE EVOLUTION OF ANNEALED Ni-Ti ALLOY THIN FILM ON (100)Si
碩士 === 國立清華大學 === 工程與系統科學系 === 87 === The reaction between Ti-Ni alloy thin film and (100) Silicon has been characterized by Field Emission Gun-Transmission Electron Microscope. The islands of epitaxial NiSi2 are formed after 400℃-30 min. annealing. Ternary silicide start to form at 600℃ annealing a...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/99960443476122551680 |
| Summary: | 碩士 === 國立清華大學 === 工程與系統科學系 === 87 === The reaction between Ti-Ni alloy thin film and (100) Silicon has been characterized by Field Emission Gun-Transmission Electron Microscope. The islands of epitaxial NiSi2 are formed after 400℃-30 min. annealing. Ternary silicide start to form at 600℃ annealing and grow into continuous film at 800℃ annealing coexist with Continuous NiSi2 laryer. NiSi is found to be the most stable phase at 600℃ annealing, the formation of NiSi2 at initial stage of 600℃ annealing is dominated by dynamical condition, by prolonged annealing time all NiSi2 convert into NiSi at condition of with extra Nickel atom supplied.
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