GROWTH AND CHARACTERIZATION OF InGaAsP AND InAsSbP COMPOUND SEMICONDUCTORS BY LPE TECHNIQUE

• Main Authors: Lung-Chien Chen, 陳隆建
• Other Authors: Meng-Chyi Wu
• Format: Others
• Language: zh-TW
• Published: 1999
• Online Access: http://ndltd.ncl.edu.tw/handle/73939097971404655882

博士 === 國立清華大學 === 電機工程學系 === 87 === In first aspect of present thesis, In0.35Ga0.65P epitaxial layers were grown on (111)B-oriented GaP substrates by LPE from Sn-rich solutions. In0.35Ga0.65P films could not grown on GaP substrates by conventional In-rich solutions, because the lattice mismatch about +2.61% with GaP substrates. The growth rate of In0.35Ga0.65P layers grown from Sn-rich solutions has a carrier concentration around 1018-1019 cm-3. The low-temperature PL spectra of In0.35Ga0.65P are dominated by near band-to-band, donor-to-valence band, and donor-acceptor pair transitions. The In0.35Ga0.65P/GaP sample exhibits a very good interface and high-quality single crystal examined by HRTEM and TED, respectively. Next, in second aspect of present thesis, undoped, Te-, and Zn-doped In0.37Ga0.63P and In0.2Ga0.8As0.27P0.73 epitaxial layers were grown on (100) GaAs0.69P0.31 substrate by liquid-phase epitaxy (LPE) from In-rich solutions. The optimum growth condition is obtained as the temperature is at ~800℃ and cooling rate R=0.2℃/min. The background electron concentrations for undoped In0.37Ga0.63P and In0.2Ga0.8As0.27P0.73 are as low as 2-61016 cm-3. The photoluminescence (PL) properties of undoped, Te-, and Zn-doped In0.37Ga0.63P and In0.2Ga0.8As0.27P0.73 epitaxial layers on GaAs0.69P0.31 substrates also have been examined in detail. The 10K and 300K PL spectra of In0.37Ga0.63P and In0.2Ga0.8As0.27P0.73 located at 568nm and 590nm, and 615nm and 639nm, respectively. We fabricate five different kinds structure light-emitting diodes successfully. The performance of these LEDs has been investigated by I-V, EL, L-I and burn-in. With the structure II LEDs, the light output power at forward current of 20 mA can up to 0.1 mW. Also, it exhibits an excellent lifetime during the burn-in. Finally, in third aspect of present thesis, InAsSbP epitaxial layers can be grown on the InAs substrates by LPE from In-rich solutions. The band gap of the InAs0.86Sb0.05P0.09 epitaxial layer, estimated by FTIR at room temperature, is 0.4eV. We have described the Raman scattering of InAs1-x-ySbxPy quaternary alloys and confirmed the three-mode behavior, because of the three binary compositions of InSb-, InAs-, and InP-like phonon modes. The InAsSbP diode exhibits that the dark current at 30-80℃varies as exp(-Eg/nkT) with n = 1.7-1.8, and the current was dominated by surface current or G-R current. However, as the temperature exceeded 100℃, the ideality factor was decreased to 1.1 and 1.2 at -0.25 and -2 V, respectively, and the dark current was dominated by diffusion current.