GROWTH AND CHARACTERIZATION OF InGaAsP AND InAsSbP COMPOUND SEMICONDUCTORS BY LPE TECHNIQUE
博士 === 國立清華大學 === 電機工程學系 === 87 === In first aspect of present thesis, In0.35Ga0.65P epitaxial layers were grown on (111)B-oriented GaP substrates by LPE from Sn-rich solutions. In0.35Ga0.65P films could not grown on GaP substrates by conventional In-rich solutions, because the lattice mismatch abou...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/73939097971404655882 |