The Fabrication and Electrical Characterization of Ba(Ti0.8Sn0.2)O3 Thin Films
碩士 === 國立清華大學 === 電子工程研究所 === 87 === In recent years, some perovskite-type ceramic thin films of high dielectric constant have been proposed to be a promising material for charge storage capacitors in Gbit DRAM cells. Regarding their device applications, the electrical properties, such as...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/79419039086902859003 |