電子束蒸鍍法成長Ni80Fe20(100)、NiMn(100)磊晶膜及其磁性質之研究

• Main Authors: Yung-Hung Wang, 王泳弘
• Other Authors: Chih-Huang Lai
• Format: Others
• Language: zh-TW
• Published: 1999
• Online Access: http://ndltd.ncl.edu.tw/handle/24533765243827757099

碩士 === 國立清華大學 === 材料科學工程學系 === 87 === NiMn is one of most promising candidates for the antiferromagnetic pinning layer of spin valves due to its superior thermal stability. Almost all of previous works were on polycrystalline NiMn, especially on (111)-textured NiMn films. The antiferromagnetic NiMn phase is of a CuAu-I (L10) ordered tetragonal crystal structure, which consists of alternating planes of Ni and Mn. In bulk NiMn, its magnetic spins were aligned on (001) planes; therefore, it would be an interest to study the exchange anisotropy on the (001) NiMn/NiFe system. E-beam evaporated Cu films were found to epitaxially grow on Si(001), and were used as seed layers for depositing epitaxial metal films. In this work, epitaxial (001)Ni80Fe20 and (001)NiMn were prepared on the Si/Cu(001) structural templates by e-beam evaporation, and the exchange anisotropy was studied.